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January 2010
FDC655BN
Single N-Channel, Logic Level, PowerTrench ? MOSFET
30 V, 6.3 A, 25 m ?
tm
Features
Max r DS(on) = 25 m ? at V GS = 10 V, I D = 6.3 A
Max r DS(on) = 33 m ? at V GS = 4.5 V, I D = 5.5 A
Fast switching
Low gate charge
High performance trchnology for extremely low r DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench ? process
that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applicatoins where low in-line power loss and fast
switching are required.
D
D
G
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
D
D
S
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
I D
P D
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T A = 25°C
(Note 1a)
( Note 1a)
(Note 1b)
6.3
20
1.6
0.8
A
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction to Ambient
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
.55B
Device
FDC655BN
Package
SSOT-6 TM
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
?2010 Fairchild Semiconductor Corporation
FDC655BN Rev . C2
1
www.fairchildsemi.com
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相关代理商/技术参数
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FDC655N 制造商:Rochester Electronics LLC 功能描述:- Bulk
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FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor Transistor Polarity:Du
FDC6561AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SUPERSOT-6
FDC6561AN_Q 功能描述:MOSFET N-Channel 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube